XPT IGBT Dies
Features:
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage
  • Rugged Trench XPT design (Xtreme light Punch Through) results in:

  • - short circuit rated for 10 µsec.
    - very low gate charge
    - square RBSOA @ 2x Ic
    - low EMI
    - Tvjm = 175°C
  • Thin wafer technology combined with the XPT design results in a competitive low Vce(sat)
  • Solderable/sinterable frontside metallization for highly reliable interconnection technology
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