Technology

{var val = ''}
			{var skip = false}
			{var first = true}
			{var col1}
			
			{for part in parts}
				{eval}
					col1 = true;
					IXYS.Grid.subFamilies[part.ProductSubFamilyID] = part.SubFamilyName;
				{/eval}
			<tr id="tr_${part.PartID}_${part.ProductSubFamilyID}">
				{for property in part}
					{eval}
						skip = (property_index == "PartID" || property_index == "ProductSubFamilyID" || property_index == "SubFamilyName" || property_index == "DivisionWebAddress");
						
						if(!skip){
							val = (part[property_index] || String.fromCharCode(160));
							if(first) IXYS.Grid.colnames.push(property_index);
						}
					{/eval}
					
					{if !skip}
				<td{if col1} class="first"{/if}>
					{if property_index == "PartNumber"}<a href="/PartDetails.aspx?pid=${part['PartID']}&r=1">{/if}
					{if property_index == "Division"}{if part['DivisionWebAddress'] != ''}<a href="${part['DivisionWebAddress']}" target="_blank">{else}-{/if}{/if}
					${val}
					{if property_index == "PartNumber" || property_index == "DivisionName"}</a>{/if}
				</td>

{eval}
							col1 = false;
						{/eval}
					{/if}
				{/for}
			</tr>
				{eval}
					first = false;
				{/eval}
			{/for}

XPT IGBT Modules

Features:
Features:

Easy paralleling due to the positive temperature coefficient of the on-state voltage

Rugged XPT design (Xtreme light Punch Through) results in:

- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3 x Ic

Thin wafer technology combined with the SPT design results in a competitive low VCE(sat)

SONIC™ diode

- fast and soft reverse recovery
- low operating forward voltage

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