• Extreme-light Punch-Through (XPT™) thin wafer technology
  • Reduced thermal resistance
  • Low energy losses
  • Fast switching
  • Low tail current
  • High power density
  • Square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
  • Short circuit capability
  • Positive on-state voltage temperature coefficient
  • Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
  • International standard and proprietary high voltage packages
  • There are no parts for the "XPT™ IGBTs" family.
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