N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options
Features:
  • Trench Gate MOSFET Technology
  • Break down voltages VDSS: 36V to 300V
  • Current ratings ID25: 12A to 660A
  • Ultra-low on-state resistance RDS(on)
  • Superior avalanche ruggedness
  • Junction temperature TJ up to 175°C
  • International standard packages
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