Reverse Conducting IGBTs (BiMOSFETs™)
Features:
  • VCES: 1600V, 1700V, 2500V, 3000V, and 3600V
  • IC25: 5A-200A
  • “Free” intrinsic/monolithic body diode
  • MOS gate turn on for drive simplicity
  • Non-epitaxial construction and new fabrication process
  • Combined strength of the MOSFET and IGBT
  • Positive temperature coefficient of VCE(sat) and VF
  • High power density
  • High frequency operation
  • Low conduction losses
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