Trench Gate MOSFET Modules
Features:
  • Vdss: 40V to 150V, Id(25): up to 1500A
  • Very low Rds(on)
  • optimized fast intrinsic reverse diode
  • Tvj max: 175°C
  • Kelvin source terminals for easy drive
  • min. 1000 V rms Isolation with ceramic base plate (depending on package)
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