H-Bridge MOSFET Modules
Features:
  • Vdss: 100V - 600V, Id(25): 38A - 63A
  • Low Rds(on): 25.0 mOhms
  • dv/dt ruggedness. Fast reverse diode
  • low inductive current path
  • Kelvin source terminals for easy drive
  • Isolated ceramic base plate with 2500 V rms isolation
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